Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product

ABSTRACT

A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 11/185,945,filed Jul. 21, 2005 now U.S. Pat. No. 7,703,066, which is based upon andclaims the benefit of priority from prior Japanese Patent ApplicationNo. 2004-219178, filed Jul. 27, 2004. The entire contents of theseapplications are incorporated herein by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an exposure mask manufacturing method,an drawing apparatus, a semiconductor device manufacturing method, and amask blanks product in a semiconductor field.

2. Description of the Related Art

As semiconductor devices become smaller, there is an increasing demandfor miniaturization in a photolithography process. Already, the devicedesign rule is as small as 65 nm. Accordingly, the pattern dimensionprecision is required to be controlled very strictly at 5 nm or less.

In a semiconductor manufacturing process, a multilayer pattern is formedby using plural photo masks. At this time, an alignment precisionbetween upper and lower patterns is also very strict, same as in patterndimension precision, in the trend of the finer design rule.

In this background, hindering factors of high precision in a patternforming process include deformation such as distortion of photo masksoccurring when the photo masks for use in the photolithography processis chucked in the exposure apparatus.

Recently, to achieve a desired flatness, a photo mask has beendeveloped, which guarantees a desired flatness in a state that the photomask is chucked in the exposure apparatus by predicting in advanceflatness of the mask after chucking of the photo mask (Jpn. Pat. Appln.KOKAI Publication No. 2003-050458). The mask flatness is extremelyexcellent in a state that the photo mask is chucked in the exposureapparatus.

However, there are many cases in which precision of a mask patternposition becomes problematic. The reasons are considered as follows.

A photo mask manufacturing process includes a process of drawing a maskpattern on a mask blanks substrate by using a mask drawing apparatus.The mask drawing apparatus holds the mask blanks substrate so as not todistort the mask blanks substrate as much as possible. For example, themask blanks substrate is held at three points. Thus, the mask pattern isdrawn in a state that native flatness of the mask blanks substrate ismaintained.

A wafer pattern manufacturing process includes a process of transferringa mask pattern on a wafer by using a wafer exposure apparatus. The waferexposure apparatus chucks a photo mask by using a chucking mechanismsuch as a vacuum chucking mechanism. By using such a chucking mechanism,however, the photo mask is deformed.

Therefore, as shown in FIG. 18, a position of a pattern 92 is deviatedby 8 between the case where a photo mask 91 is not deformed (beforechucking) and the case where the photo mask is deformed (afterchucking). When deformed like warp as shown in FIG. 18 (warp isschematically indicated by inclined straight line) is arised, theposition of the pattern 92 is deviated to right side. Meanwhile, whenthe photo mask in the Jpn. Pat. Appln. KOKAI Publication is used, theflatness of the photo mask after chucking is improved.

Whether the photo mask in the Jpn. Pat. Appln. KOKAI Publication is usedor not, chucking the photo mask causes the deformation in the photomask, and thus, the mask pattern cannot be correctly transferred ontothe wafer precisely as the pattern position before chucking.

So far, position deviation of a mask pattern due to deformation of aphoto mask was not a serious problem. However, since the patterndimension precision is required to be very strict, 5 nm or less, at thepresent, such a problem cannot be ignored.

BRIEF SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided amethod of manufacturing an exposure mask comprising: generating orpreparing flatness variation data relating to a mask blanks substrate tobe processed into an exposure mask, the flatness variation data beingdata relating to change of flatness of the mask blank substrate causedwhen the mask blank substrate is chucked by a chuck unit of an exposureapparatus; generating position correction data of a pattern to be drawnon the mask blanks substrate based on the flatness variation data suchthat a mask pattern of the exposure mask comes to a predeterminedposition in a state that the exposure mask is chucked by the chuck unit;and drawing a pattern on the mask blanks substrate, the drawing thepattern including drawing the pattern with correcting a drawing positionof the pattern and inputting drawing data corresponding to the patternand the position correction data into a drawing apparatus.

According to an aspect of the present invention, there is provided adrawing apparatus comprising: a position correction data generating unitconfigured to generate position correction data of a pattern to be drawnon a mask blanks substrate to be processed into an exposure mask, theposition correction data being data for bringing a pattern of theexposure mask in a state chucked by a chuck unit of an exposureapparatus into a predetermined position; and a drawing unit configuredto draw the pattern on the mask blanks substrate with correcting adrawing position of the pattern based on the drawing data correspondingto the pattern and the position correction data.

According to an aspect of the present invention, there is provided amethod of manufacturing a semiconductor device comprising: applying aresist on a substrate including a semiconductor substrate; disposing anexposure mask manufactured by the exposure mask manufacturing methodaccording to any one of claims 1, 2 and 3 above the substrate in anexposure apparatus, irradiating charged beam or light onto the resist byway of the exposure mask in a state that the exposure mask is chucked bya chuck unit of the exposure apparatus, and forming a first resistpattern by developing the resist after the irradiating the charged beamor the light onto the resist; and forming a first pattern by etching thesubstrate using the first resist pattern as a mask.

According to an aspect of the present invention, there is provided amask blanks product comprising: a mask blanks substrate to be processedinto an exposure mask including a mask pattern; and a recording mediumin which position correction data of a pattern to be drawn on the maskblanks substrate is recorded, the position correction data being datafor bringing the mask pattern of the exposure mask in a state chucked bya chuck unit of an exposure apparatus into a predetermined position.

According to an aspect of the present invention, there is provided amask blanks product comprising: a mask blanks substrate to be processedinto an exposure mask including a mask pattern; and a recording mediumin which predicted flatness variation data is recorded, the predictedflatness variation data being data for predicting flatness variation ofthe exposure mask caused when the exposure mask is chucked by a chuckunit of an exposure apparatus.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the firstembodiment of the invention;

FIG. 2 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the secondembodiment of the invention;

FIG. 3 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the thirdembodiment of the invention;

FIG. 4 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the fourthembodiment of the invention;

FIG. 5 is a diagram schematically showing a drawing apparatus accordingto the fourth embodiment;

FIG. 6 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the fifthembodiment of the invention;

FIG. 7 is a diagram schematically showing a drawing apparatus accordingto the fifth embodiment;

FIG. 8 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the sixthembodiment of the invention;

FIG. 9 is a diagram schematically showing a drawing apparatus accordingto the sixth embodiment;

FIG. 10 is a diagram schematically showing a mask blanks productaccording to the seventh embodiment of the invention;

FIG. 11 is a diagram schematically showing a mask blanks productaccording to the eighth embodiment of the invention;

FIG. 12 is a diagram schematically showing a mask blanks productaccording to the ninth embodiment of the invention;

FIG. 13 is a diagram schematically showing a mask blanks productaccording to the tenth embodiment of the invention;

FIG. 14 is a diagram schematically showing a mask blanks productaccording to the eleventh embodiment of the invention;

FIG. 15 is a diagram schematically showing a mask blanks productaccording to the twelfth embodiment of the invention;

FIG. 16 is a diagram schematically showing a mask blanks productaccording to the thirteenth embodiment of the invention;

FIG. 17 is a diagram schematically showing a mask blanks productaccording to the fourteenth embodiment of the invention;

FIG. 18 is a diagram for explaining problems of a prior art; and

FIGS. 19A to 19C are diagrams for explaining a vacuum chuckingmechanism.

DETAILED DESCRIPTION OF THE INVENTION

Now, embodiments of the invention will be described below with referenceto the accompanying drawings.

(First Embodiment)

FIG. 1 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the firstembodiment of the invention.

The present embodiment is different from a prior art in that, whenforming a pattern on a mask blanks substrate 5 by using a drawingapparatus 7, data not used hitherto, that is, pattern positioncorrection data 4 is used in addition to drawing data 6 hitherto used asdata to be input to the drawing apparatus 7. The present embodiment willbe described below.

First, a mask blanks product is purchased from a mask blanksmanufacturer. The product comprises a mask blanks substrate 5 processedinto a photo mask (exposure mask); flatness measurement data (nativeflatness data) 1 of the mask blanks substrate 5 in a state not chuckedby a chuck unit (for example, a vacuum chuck) in a wafer exposureapparatus 10; and flatness prediction data (predicted flatness data) 2of the mask blanks substrate 5 in a state chucked by the chuck unit.

The mask blanks substrate 5 comprises a quartz substrate (transparentsubstrate) of 6 inches square (152 mm square) and about 6 mm inthickness, an ArF halftone film provided on the quartz substrate, a Crfilm provided on the ArF halftone film, and a chemically amplifiedresist FEP-171 of 300 nm in thickness provided on the Cr film.

The native flatness data is acquired by measuring flatness of the maskblanks substrate 5 by use of, for example, UltraFlat of Tropel. Herein,the native flatness data is mask flatness data of 1 mm grid in a regionof 150 mm square.

Next, the native flatness data 1 and predicted flatness data 2 are inputinto a computer 3.

The computer 3 generates correction data (pattern position correctiondata) 4 necessary for correcting a position of a pattern (mask pattern)on a photo mask to be a desired position in a sate that the mask blankssubstrate 5 is chucked in the wafer exposure apparatus 10 based on thenative flatness data 1 and predicted flatness data 2.

For example, when the positional deviation of the pattern before andafter chucking the photo mask in the wafer exposure apparatus 10 is δ asshown in FIG. 18, it is intended to generate data instructing theposition of the mask blanks substrate 5 to be deviated by δ to the rightside relatively with respect to drawing beam when drawing the pattern.

In order that all patterns on the photo mask after chucking come todesired positions, a process of generating the pattern positioncorrection data 4 is, for example, as follows.

That is, the process of generating the pattern position correction data4 includes; a process of calculating data (mask flatness variation data)relating to change of flatness of the mask blanks substrate 5 before andafter chucking in the wafer exposure apparatus 10 based on the nativeflatness data 1 and predicted flatness data 2; a process of generating aposition distortion map (a mask pattern position distortion map, 150 mmsquare) of the pattern on the mask blanks substrate 5 caused by changeof the flatness based on the mask flatness variation data; and a processof calculating a variation amount map (=pattern position correction data4) of the position (mask pattern position) of the mask blanks substrate5 necessary for the mask pattern to coincide with a desired positionbased on the mask pattern position distortion map.

The pattern position correction data 4 is given, for example, by X-Ystage position coordinates (X-Y coordinates) for mounting the maskblanks substrate 5 and moving the mask blanks substrate 5 in the X-Ydirection.

Next, the mask blanks substrate 5 is set in the drawing apparatus (forexample, an electron beam drawing apparatus EBM4000) 7. The patternposition correction data 4 and drawing data 6 are input to the drawingapparatus 7.

Next, a mask manufacturing process 8 including the drawing process usingthe drawing apparatus 7 is carried out. That is, the drawing apparatus 7draws a pattern corresponding to the drawing data 6 on the mask blankssubstrate 5 with correcting the relative positions of the mask blankssubstrate 5 and electron beam, such that the mask pattern of the photomask in a state chucked in the exposure apparatus 10 coincides with thedesired position based on the pattern position correction data 4.Thereafter, a resist pattern is formed by ordinary post exposure bake(PEB) and developing process. And using this resist pattern as a mask,the Cr film and halftone film are etched by an etching apparatus (forexample, UNAXIS-G4). In this manner, a mask substrate comprising aquartz substrate, patterns of the Cr film and halftone film formed onthe quartz substrate 5 is formed.

Next, the resist pattern is removed, defect inspection and defect repairfor the mask substrate are carried out, thereafter, a pellicle isattached to the mask substrate to obtain a photo mask 9.

Next, the photo mask 9 is set in the wafer exposure apparatus (forexample, a wafer exposure apparatus S307 of Nikon) 10, the resistapplied on the wafer is exposed, thereafter, an ordinary resist processsuch as developing is carried out to form a resist pattern 11.

In the wafer, a pattern of elements and wires (underlying pattern) maybe already formed, or a pattern may not be formed. In the latter case,the resist pattern 11 is used for forming, for example, an isolationtrench.

Next, the wafer is etched by using the resist pattern 11 as a mask, anda device pattern 12 is formed on the wafer. The device pattern 12 is apattern of, for example, an isolation trench, a transistor, a wiring, anelectrode, a contact hole, etc.

In the example, only one photo mask 9 is explained, but actually pluralphoto masks 9 are generated. Therefore, a plurality of laminated devicepatterns 12 are formed.

The in-plane distribution (64 positions in chip) of alignment error ofthe device pattern of the uppermost layer and its immediately lowerdevice pattern (underlying pattern) is measured by a measuringinstrument of KLA. As a result, the alignment error of 20 nm (3δ)existing in the case of using a conventional photo mask has beenoutstandingly decreased to 12 nm (3δ) in the case of using the photomask of the present embodiment. Therefore, the device manufacturingyield is improved, and the semiconductor device can be supplied at lowerprice and shorter term than in the prior art.

(Second Embodiment)

FIG. 2 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the secondembodiment of the invention. Same parts as in FIG. 1 are identified withsame reference numerals, and detailed description of configuration andeffects is omitted.

In the first embodiment, explanation has been given for the case wherethe mask blanks product comprising the mask blanks substrate 5, nativeflatness data 1, and predicted flatness data 2 is purchased from a maskblanks manufacturer.

The present embodiment explains that a mask blanks product comprisingthe mask blanks substrate 5 and native flatness data 1 is purchased froma mask blanks manufacturer. That is, the predicted flatness data 2 isnot supplied from the mask blanks manufacturer.

In the present embodiment, therefore, the predicted flatness data 2 isgenerated by the mask manufacturer.

First, in the present embodiment, chuck structure data 2 a of theexposure apparatus 10 is prepared at the mask manufacturer.

The chuck structure data 2 a is data relating to a chuck unit (forexample, a vacuum chuck mechanism) for chucking the mask blankssubstrate 5, and it is dimensional data relating to the structure of aportion for chucking the mask blanks substrate 5 (chuck unit). Morespecifically, it is dimensional data of a portion having effects ondeformation (distortion) of the mask blanks substrate 5, out of thechuck unit.

For example, in the case of the vacuum chuck mechanism, as shown inFIGS. 19A to 19C, the data relates to a distance L between two chuckunits 31, a length of the chuck unit 31, a width W of the chuck unit 31,a width W1 of an opening of the chuck unit 31 (the portion notcontacting with the mask blanks substrate 5), and a width W2 of theportion of the chuck unit 31 contacting with the mask blanks substrate5.

Next, the native flatness data 1 and chuck structure data 2 a are inputinto the computer 3. The computer 3 generates predicted flatness data ina state that the mask blanks substrate 5 is chucked in the exposureapparatus 10 based on the native flatness data 1 and chuck structuredata 2 a, and generates pattern position correction data 4 a based onthe predicted flatness data and native flatness data 1.

The subsequent process is same as in the first embodiment, and sameeffects as in the first embodiment are obtained.

(Third Embodiment)

FIG. 3 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the thirdembodiment of the invention. Same parts as in FIG. 1 are identified withsame reference numerals, and detailed description of configuration andeffects is omitted.

The present embodiment is different from the first embodiment in that amask blanks product comprising the mask blanks substrate 5 and maskflatness variation data 2 b is purchased from a mask blanksmanufacturer. A computer 3 generates pattern position correction databased on the mask flatness variation data 2 b.

In the first embodiment, the mask flatness variation data is generatedfrom the native flatness data 1 and predicted flatness data 2, but inthe present embodiment, the mask flatness variation data 2 b ispreliminarily given from the mask blanks manufacturer, and thus, theprocess of generating the pattern position correction data issimplified. Besides, same effects as in the first embodiment areobtained.

(Fourth Embodiment)

FIG. 4 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the fourthembodiment of the invention. FIG. 5 is a diagram schematically showing adrawing apparatus 7 a of the present embodiment. Same parts as in FIG. 1are identified with same reference numerals, and detailed description ofconfiguration and effects is omitted.

The present embodiment is different from the first embodiment (FIG. 1)in that a drawing apparatus 7 a having a mechanism for generatingpattern position correction data 4 is used. That is, the drawingapparatus 7 a comprises, as shown in FIG. 5, a pattern positioncorrection data generating unit 13 a for generating the pattern positioncorrection data 4 by using the native flatness data 1 and predictedflatness data 2, and a pattern drawing mechanism 14 for drawing apattern on the mask blanks substrate 5 with correcting the mask patternposition based on the pattern position correction data 4 and the drawingdata 6.

The pattern position correction data generating unit 13 a comprisesexclusive hardware for generating the pattern position correction data4, or a general-purpose computer (CPU), and a program for causing thecomputer to execute the instruction for generating pattern positioncorrection data.

The instruction for generating the pattern position correction dataincludes a instruction for generating flatness variation data based onthe predicted flatness data 2, and a instruction for generating patternposition correction data based on the flatness variation data and thenative flatness data.

The drawing apparatus 7 a is manufactured, for example, by a drawingapparatus manufacturer.

Also in the present embodiment, same effects as in the first embodimentare obtained.

(Fifth Embodiment)

FIG. 6 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the fifthembodiment of the invention. FIG. 7 is a diagram schematically showing adrawing apparatus 7 b of the present embodiment. Same parts as in FIG. 2are identified with same reference numerals, and detailed description ofconfiguration and effects is omitted.

The present embodiment is different from the second embodiment (FIG. 2)in that the drawing apparatus 7 b having a mechanism for generatingpattern position correction data 4 is used. That is, the drawingapparatus 7 b comprises, as shown in FIG. 7, a pattern positioncorrection data generating unit 13 b for generating the pattern positioncorrection data 4 by using the native flatness data 1 and the chuckstructure data 2 a, and a pattern drawing mechanism 14 for drawing apattern on the mask blanks substrate 5 with correcting the mask patternposition based on the pattern position correction data 4 and the drawingdata 6.

The pattern position correction data generating unit 13 bcomprises-exclusive hardware for generating the pattern positioncorrection data 4, or a general-purposed computer (CPU), and a programfor causing the computer to execute the instruction for generatingpattern position correction data.

The instruction for generating the pattern position correction dataincludes a instruction for generating predicted flatness data 2 based onthe chuck structure data, a instruction for generating flatnessvariation data based on the predicted flatness data 2, and a instructionfor generating pattern position correction data based on the flatnessvariation data and the native flatness data 1.

The drawing apparatus 7 b is manufactured, for example, by a drawingapparatus manufacturer.

Also in the present embodiment, same effects as in the second embodimentare obtained.

(Sixth Embodiment)

FIG. 8 is a flowchart from a photo mask manufacturing process to asemiconductor device manufacturing process according to the sixthembodiment of the invention. FIG. 9 is a diagram schematically showing adrawing apparatus 7 c of the present embodiment. Same parts as in FIG. 3are identified with same reference numerals, and detailed description ofconfiguration and effects is omitted.

The present embodiment is different from the third embodiment (FIG. 3)in that the drawing apparatus 7 c having a mechanism for generatingpattern position correction data 4 is used. That is, the drawingapparatus 7 c comprises, as shown in FIG. 9, a pattern positioncorrection data generating unit 13 c for generating the pattern positioncorrection data 4 based on the flatness variation data 2 b, and apattern drawing mechanism 14 for drawing a pattern on the mask blankssubstrate 5 with correcting the mask pattern position based on thepattern position correction data 4 and the drawing data 6.

The pattern position correction data generating unit 13 c comprisesexclusive hardware for generating pattern position correction data, or ageneral-purpose computer (CPU), and a program for causing the computerto execute the instruction of generating pattern position correctiondata.

The drawing apparatus 7 c is manufactured, for example, by a drawingapparatus manufacturer.

Also in the present embodiment, same effects as in the third embodimentare obtained.

(Seventh Embodiment)

FIG. 10 is a diagram schematic showing a mask blanks product accordingto the seventh embodiment of the invention.

The mask blanks product 20 of the present embodiment comprises a maskblanks substrate 5, and a recording medium 4M having pattern positioncorrection data recorded therein. The recording medium 4M is, forexample, a wireless IC tag seal attached to a container accommodatingthe mask blanks substrate 5.

The mask blanks product 20 is manufactured and distributed by, forexample, a mask blanks manufacturer. Native flatness data is prepared,for example, by a mask manufacturer having purchased the mask blanksproduct 20, or a mask blanks manufacturer.

The mask blanks product 20 of the present embodiment includes therecording medium 4M, and therefore, the mask manufacturer havingpurchased the mask blanks product 20 does not have to generate patternposition correction data.

(Eighth Embodiment)

FIG. 11 is a diagram schematically showing a mask blanks productaccording to the eighth embodiment of the invention. Same parts as inFIG. 10 are identified with same reference numerals, and detaileddescription is omitted.

A mask blanks product 20 a of the present embodiment comprises a maskblanks substrate 5, a recording medium 1M having native flatness datarecorded therein, and a recording medium 4M having pattern positioncorrection data recorded therein. The recording medium 1M and recordingmedium 4M may be either separate physically, or identical physically. Inthe latter case, the recording medium 1M, 4M is, for example, onewireless IC tag seal attached to a container accommodating the maskblanks substrate 5.

Since the mask blanks product 20 a of the present embodiment includesthe recording medium 4N, the mask manufacturer having purchased the maskblanks product 20 a does not have to generate pattern positioncorrection data.

(Ninth Embodiment)

FIG. 12 is a diagram schematically showing a mask blanks productaccording to the ninth embodiment of the invention. Same parts as inFIG. 10 are identified with same reference numerals, and detaileddescription is omitted.

A mask blanks product 20 b of the present embodiment comprises a maskblanks substrate 5, a recording medium 2M having predicted flatness datarecorded therein, and a recording medium 4M having pattern positioncorrection data recorded therein. The recording medium 2M and recordingmedium 4M may be either separate physically, or identical physically. Inthe latter case, the recording medium 2M, 4M is, for example, onewireless IC tag seal attached to a container accommodating the maskblanks substrate 5.

Since the mask blanks product 20 b of the present embodiment includesthe recording medium 4M, the mask manufacturer having purchased the maskblanks product 20 b does not have to generate pattern positioncorrection data.

(Tenth Embodiment)

FIG. 13 is a diagram schematically showing a mask blanks productaccording to the tenth embodiment of the invention. Same parts as inFIG. 10 are identified with same reference numerals, and detaileddescription is omitted.

A mask blanks product 20 c of the present embodiment comprises a maskblanks substrate 5, a recording medium 1M having native flatness datarecorded therein, a recording medium 2M having predicted flatness datarecorded therein, and a recording medium 4M having pattern positioncorrection data recorded therein. The recording medium 1M, recordingmedium 2M and recording medium 4M may be either separate physically, oridentical at least in two of them physically. When all of them areidentical physically, the recording medium 1M, 2M, 4M is, for example,one wireless IC tag seal attached to a container accommodating the maskblanks substrate 5.

The mask blanks product 20 c of the present embodiment includes therecording medium 1M, 2M, 4M which may be required at the maskmanufacturer, and the load of the mask manufacturer may be substantiallylessened.

(Eleventh Embodiment)

FIG. 14 is a diagram schematically showing a mask blanks productaccording to the eleventh embodiment of the invention. Same parts as inFIG. 10 are identified with same reference numerals, and detaileddescription is omitted.

A mask blanks product 20 d of the present embodiment comprises a maskblanks substrate 5, and a recording medium 6M having recorded thereinpredicted flatness variation data for predicting a flatness variation ofan exposure mask cased when the exposure mask is chucked by a chuck unitof an exposure apparatus. The recording medium 6M is, for example, awireless IC tag seal attached to a container accommodating the maskblanks substrate 5.

The mask blanks product 20 d is manufactured and distributed, forexample, by a mask blanks manufacturer. Native flatness data is preparedby a mask manufacturer having purchased the mask blanks product 20 d, orpurchased from a mask blanks manufacturer.

Since the mask blanks product 20 d of the present embodiment includesthe recording medium 6M, the mask manufacturer having purchased the maskblanks product 20 d does not have to generate predicted flatnessvariation data.

(Twelfth Embodiment)

FIG. 15 is a diagram schematically showing a mask blanks productaccording to the twelfth embodiment of the invention. Same parts as inFIG. 14 are identified with same reference numerals, and detaileddescription is omitted.

A mask blanks product 20 e of the present embodiment comprises a maskblanks substrate 5, a recording medium 1M having native flatness datarecorded therein, and a recording medium 6M having predicted flatnessvariation data recorded therein. The recording medium 1M and recordingmedium 6M may be either separate physically, or identical physically. Inthe latter case, the recording medium 1M, 6M is, for example, onewireless IC tag seal attached to a container accommodating the maskblanks substrate 5.

Since the mask blanks product 20 e of the present embodiment includesthe recording medium 6M, the manufacturer having purchased the maskblanks product 20 e does not have to prepare predicted flatnessvariation data.

(Thirteenth Embodiment)

FIG. 16 is a diagram schematically showing a mask blanks productaccording to the thirteenth embodiment of the invention. Same parts asin FIG. 14 are identified with same reference numerals, and detaileddescription is omitted.

A mask blanks product 20 f of the present embodiment comprises a maskblanks substrate 5, a recording medium 2M having predicted flatness datarecorded therein, and a recording medium 6M having predicted flatnessvariation data recorded therein. The recording medium 2M and recordingmedium 6M may be either separate physically, or identical physically. Inthe latter case, the recording medium 2M, 6M is, for example, onewireless IC tag seal attached to a container accommodating the maskblanks substrate 5.

Since the mask blanks product 20 f of the present embodiment includesthe recording medium 6M, the mask manufacturer having purchased the maskblanks product 20 f does not have to prepare predicted flatnessvariation data.

(Fourteenth Embodiment)

FIG. 17 is a diagram schematically showing a mask blanks productaccording to the fourteenth embodiment of the invention. Same parts asin FIGS. 15 and 16 are identified with same reference numerals, anddetailed description is omitted.

A mask blanks product 20 g of the present embodiment comprises a maskblanks substrate 5, a recording medium 1M having native flatness datarecorded therein, a recording medium 2M having predicted flatness datarecorded therein, and a recording medium 6M having predicted flatnessvariation data recorded therein. The recording medium 1M, recordingmedium 2M and recording medium GM may be either separate physically, oridentical at least in two of them physically. When all of them areidentical physically, the recording medium 1M, 2M, 6M is, for example,one wireless IC tag seal attached to a container accommodating the maskblanks substrate 5.

The mask blanks product 20 g of the present embodiment includes therecording medium 1M, 2M, 6M which may be required at the maskmanufacturer, and therefore, the load of the mask manufacturer may besubstantially lessened.

The present invention is not limited to these embodiments alone. Forexample, in the foregoing embodiments, the resist on the wafer isexposed with light by way of the photo mask, but the present inventionmay be also applied in the case in which a resist on a wafer is exposurewith charged beam (for example, electron beam) by way of a charged beammask (for example, an electron beam exposure mask).

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A method of manufacturing a semiconductor device comprising: applyinga first resist layer on a substrate including a semiconductor substrate;manufacturing a first exposure mask; disposing the first exposure maskabove the substrate in an exposure apparatus; irradiating a charged beamor light onto the first resist layer by way of the first exposure maskin a state that the first exposure mask is chucked by the chuck unit ofthe exposure apparatus; forming a first resist pattern by developing thefirst resist layer after the irradiating the charged beam or the lightonto the first resist layer; and forming a first pattern by etching thesubstrate using the first resist pattern as a mask, whereinmanufacturing the first exposure mask comprises generating or preparingflatness variation data relating to a mask blanks substrate to beprocessed into an exposure mask, the flatness variation data being datarelating to a change of flatness of the mask blanks substrate causedwhen the mask blanks substrate is chucked by a chuck unit of theexposure apparatus; generating position correction data of a pattern tobe drawn on the mask blanks substrate based on the flatness variationdata such that a mask pattern of the first exposure mask comes to apredetermined position in a state that the first exposure mask ischucked by the chuck unit; and drawing a pattern on the mask blankssubstrate, wherein drawing the pattern includes drawing the pattern withcorrecting a drawing position of the pattern and inputting drawing datacorresponding to the pattern and the position correction data into adrawing apparatus.
 2. The method of manufacturing a semiconductordevice, according to claim 1, further comprising: applying a secondresist layer on the substrate including the first pattern; manufacturinga second exposure mask; disposing the second exposure mask above thesubstrate in the exposure apparatus; irradiating the charged beam orlight onto the second resist layer by way of the second exposure mask ina state that the second exposure mask is chucked by the chuck unit ofthe exposure apparatus; forming a second resist pattern by developingthe second resist layer after the irradiating the charged beam or thelight onto the second resist layer; and forming a second pattern byetching the substrate using the second resist pattern as a mask, whereinmanufacturing the second exposure mask comprises generating or preparingflatness variation data relating to a mask blanks substrate to beprocessed into the second exposure mask, the flatness variation databeing data relating to a change of flatness of the mask blanks substratecaused when the mask blank substrate is chucked by a chuck unit of theexposure apparatus; generating position correction data of a pattern tobe drawn on the mask blanks substrate based on the flatness variationdata such that a mask pattern of the second exposure mask comes to apredetermined position in a state that the second exposure mask ischucked by the chuck unit; and drawing a pattern on the mask blankssubstrate, the drawing the pattern including drawing the pattern withcorrecting a drawing position of the pattern and inputting drawing datacorresponding to the pattern and the position correction data into adrawing apparatus.
 3. The method of manufacturing a semiconductordevice, according to claim 2, wherein the first and second patterns aredevice patterns.
 4. The method of manufacturing a semiconductor deviceaccording to claim 1, wherein generating flatness variation data in themanufacturing the second exposure mask includes: preparing flatness ofthe mask blanks substrate in a state not chucked by the chuck unit andpredicted flatness of the mask blanks substrate in a state chucked bythe chuck unit; and generating the flatness variation data based on theflatness of the mask blanks substrate and the predicted flatness of themask blanks substrate.
 5. The method of manufacturing a semiconductordevice according to claim 1, wherein generating flatness variation datain the manufacturing the second exposure mask includes: preparingflatness of the mask blanks substrate in a state not chucked by thechuck unit and data relating to the chuck unit; and generating theflatness variation data based on the flatness of the mask blankssubstrate and the data relating to the chuck unit.
 6. The method ofmanufacturing a semiconductor device according to claim 1, whereingenerating flatness variation data includes: preparing flatness of themask blanks substrate in a state not chucked by the chuck unit andpredicted flatness of the mask blanks substrate in a state chucked bythe chuck unit; and generating the flatness variation data based on theflatness of the mask blanks substrate and the predicted flatness of themask blanks substrate.
 7. The method of manufacturing a semiconductordevice, according to claim 6, further comprising: applying a secondresist layer on the substrate including the first pattern; manufacturinga second exposure mask; disposing the second exposure mask above thesubstrate in the exposure apparatus; irradiating the charged beam orlight onto the second resist layer by way of the second exposure mask ina state that the second exposure mask is chucked by the chuck unit ofthe exposure apparatus; forming a second resist pattern by developingthe second resist layer after the irradiating the charged beam or thelight onto the second resist layer; and forming a second pattern byetching the substrate using the second resist pattern as a mask, whereinmanufacturing the second exposure mask comprises generating or preparingflatness variation data relating to a mask blanks substrate to beprocessed into the second exposure mask, the flatness variation databeing data relating to a change of flatness of the mask blanks substratecaused when the mask blanks substrate is chucked by a chuck unit of theexposure apparatus; generating position correction data of a pattern tobe drawn on the mask blanks substrate based on the flatness variationdata such that a mask pattern of the second exposure mask comes to apredetermined position in a state that the second exposure mask ischucked by the chuck unit; and drawing a pattern on the mask blankssubstrate, the drawing the pattern including drawing the pattern withcorrecting a drawing position of the pattern and inputting drawing datacorresponding to the pattern and the position correction data into adrawing apparatus.
 8. The method of manufacturing a semiconductordevice, according to claim 6, wherein generating flatness variation datain the manufacturing the second exposure mask includes: preparingflatness of the mask blanks substrate in a state not chucked by thechuck unit and predicted flatness of the mask blanks substrate in astate chucked by the chuck unit; and generating the flatness variationdata based on the flatness of the mask blanks substrate and thepredicted flatness of the mask blanks substrate.
 9. The method ofmanufacturing a semiconductor device, according to claim 6, whereingenerating flatness variation data in the manufacturing the secondexposure mask includes: preparing flatness of the mask blanks substratein a state not chucked by the chuck unit and data relating to the chuckunit; and generating the flatness variation data based on the flatnessof the mask blanks substrate and the data relating to the chuck unit.10. The method of manufacturing a semiconductor device, according toclaim 1, wherein the generating flatness variation data includes:preparing flatness of the mask blanks substrate in a state not chuckedby the chuck unit and data relating to the chuck unit; and generatingthe flatness variation data based on the flatness of the mask blankssubstrate and the data relating to the chuck unit.
 11. The method ofmanufacturing a semiconductor device, according to claim 10, furthercomprising: applying a second resist layer on the substrate includingthe first pattern; manufacturing a second exposure mask; disposing thesecond exposure mask above the substrate in the exposure apparatus;irradiating the charged beam or light onto the second resist layer byway of the second exposure mask in a state that the second exposure maskis chucked by the chuck unit of the exposure apparatus; forming a secondresist pattern by developing the second resist layer after theirradiating the charged beam or the light onto the second resist layer;and forming a second pattern by etching the substrate using the secondresist pattern as a mask, wherein manufacturing the second exposure maskcomprises generating or preparing flatness variation data relating to amask blanks substrate to be processed into the second exposure mask, theflatness variation data being data relating to a change of flatness ofthe mask blanks substrate caused when the mask blanks substrate ischucked by a chuck unit of the exposure apparatus; generating positioncorrection data of a pattern to be drawn on the mask blanks substratebased on the flatness variation data such that a mask pattern of thesecond exposure mask comes to a predetermined position in a state thatthe second exposure mask is chucked by the chuck unit; and drawing apattern on the mask blanks substrate, the drawing the pattern includingdrawing the pattern with correcting a drawing position of the patternand inputting drawing data corresponding to the pattern and the positioncorrection data into a drawing apparatus.
 12. The method ofmanufacturing a semiconductor device, according to claim 10, wherein thegenerating flatness variation data in the manufacturing the secondexposure mask includes: preparing flatness of the mask blanks substratein a state not chucked by the chuck unit and predicted flatness of themask blanks substrate in a state chucked by the chuck unit; andgenerating the flatness variation data based on the flatness of the maskblanks substrate and the predicted flatness of the mask blankssubstrate.
 13. The method of manufacturing a semiconductor device,according to claim 10, wherein the generating flatness variation data inthe manufacturing the second exposure mask includes: preparing flatnessof the mask blanks substrate in a state not chucked by the chuck unitand data relating to the chuck unit; and generating the flatnessvariation data based on the flatness of the mask blanks substrate andthe data relating to the chuck unit.